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Cited article:

Tight‐Binding Approach for the Band Structure of GaAs‐Type Semiconductors

M. Merian, G. Lampel and B. Coqblin
physica status solidi (b) 185 (2) 389 (1994)
https://doi.org/10.1002/pssb.2221850210

Insulating, metallic, or semimetallic electronic nature of XSi2compounds: Application to WSi2

P. A. Badoz, E. Rosencher, J. Torres and G. Fishman
Journal of Applied Physics 62 (3) 890 (1987)
https://doi.org/10.1063/1.339695

Exact relationship between the equivalent-orbital and bond-orbital models of polar or covalent semiconductors

J -L Colot
Journal of Physics C: Solid State Physics 15 (31) 6351 (1982)
https://doi.org/10.1088/0022-3719/15/31/011

Calculation of atomic relaxation near the (111) 1 × 1 surface of covalent semiconductors: Tight‐binding Green's function approach

K. Masuda
physica status solidi (b) 107 (2) 529 (1981)
https://doi.org/10.1002/pssb.2221070217

Recent Advances in the Quantum Theory of Polymers

J. P. Gaspard
Lecture Notes in Physics, Recent Advances in the Quantum Theory of Polymers 113 291 (1980)
https://doi.org/10.1007/3540097317_91

On the relation between the gap, the transformation temperature and the average heat of atomization of As2Te3 glasses

L. Štourač and A. Hrubý
Czechoslovak Journal of Physics 23 (10) 1077 (1973)
https://doi.org/10.1007/BF01586846