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Cited article:

Determination of the spin-exchange interaction constant in wurtzite GaN

M. Julier, J. Campo, B. Gil, J. P. Lascaray and S. Nakamura
Physical Review B 57 (12) R6791 (1998)
https://doi.org/10.1103/PhysRevB.57.R6791

Optical properties of GaN epilayers on sapphire

Magloire Tchounkeu, Olivier Briot, Bernard Gil, Jean Paul Alexis and Roger‐Louis Aulombard
Journal of Applied Physics 80 (9) 5352 (1996)
https://doi.org/10.1063/1.363475

Optical response of excitons in a single quantum well: Calculation of normal incidence reflectivity

Y. Chen
Il Nuovo Cimento D 11 (7) 993 (1989)
https://doi.org/10.1007/BF02455353

Exciton reflectivity of GaAs/Ga1−x Al x As multiple quantum wells

Y. Chen, R. Cingolani and J. Massies
Il Nuovo Cimento D 11 (7) 1049 (1989)
https://doi.org/10.1007/BF02455356

Photoluminescence in quantum well and bulk GaAs: a direct comparative study

Y. Chen, R. Cingolani, L. C. Andreani, F. Bassani and J. Massies
Il Nuovo Cimento D 10 (7) 847 (1988)
https://doi.org/10.1007/BF02450144

Optical investigations of GaAs/Ga1−x Al x As Quantum wells grown by molecular-beam epitaxy

Y. Chen, R. Cingolani, J. Massies, et al.
Il Nuovo Cimento D 10 (9) 1093 (1988)
https://doi.org/10.1007/BF02450207