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Cited article:
Y. Quéré
Ann. Phys., 14 5 (1970) 105-137
Published online: 2017-04-25
This article has been cited by the following article(s):
Investigation of defects by RBS-channeling methods
G. Götz, K. Gärtner and W. Wesch
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 63 (1-2) 59 (1992)
DOI: 10.1016/0168-583X(92)95169-R
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Energy dependence of dechanneling due to dislocation loops
Konrad Gärtner and Arnaldo Uguzzoni
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 67 (1-4) 189 (1992)
DOI: 10.1016/0168-583X(92)95799-W
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A study of shallow and deep damage in Cu after implantation of 100 keV Cu and Ag ions
R.J.Th. Lindgreen, D.O. Boerma and J.Th.M. de Hosson
Nuclear Instruments and Methods in Physics Research 209-210 963 (1983)
DOI: 10.1016/0167-5087(83)90906-7
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Observation de la precipitation d'amas de guinier-preston par decanalisation de particules α
Georges Dèsarmot and Yves Quéré
Acta Metallurgica 28 (10) 1375 (1980)
DOI: 10.1016/0001-6160(80)90006-1
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Studies of implanted iron in silicon by channeling and Rutherford backscattering
P. W. Wang, H. S. Cheng, W. M. Gibson and J. W. Corbett
Journal of Applied Physics 60 (4) 1336 (1986)
DOI: 10.1063/1.337306
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Dechanneling due to dislocation loops
Konrad Gärtner and Amaldo Uguzzoni
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 33 (1-4) 607 (1988)
DOI: 10.1016/0168-583X(88)90641-6
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Dechanneling by dislocations and stacking faults in ion-implanted Si
G. Götz and B. Gruska
Nuclear Instruments and Methods in Physics Research 194 (1-3) 199 (1982)
DOI: 10.1016/0029-554X(82)90515-8
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Image formation in track-etch detectors—I. The large area signal transfer function
Radomir Ilić and Mitja Najžer
International Journal of Radiation Applications and Instrumentation. Part D. Nuclear Tracks and Radiation Measurements 17 (4) 453 (1990)
DOI: 10.1016/1359-0189(90)90002-F
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Ion channeling study of radiation induced defects in a bent silicon crystal
G.H. Wang, P.J. Cong, W.M. Gibson, et al.
Nuclear Instruments and Methods in Physics Research 218 (1-3) 669 (1983)
DOI: 10.1016/0167-5087(83)91062-1
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Strain relaxation in low lattice mismatch epitaxy of CdTe/Cd0.97Zn0.03Te (001) by channeling
A. C. Chami, E. Ligeon, R. Danielou, et al.
Applied Physics Letters 52 (22) 1874 (1988)
DOI: 10.1063/1.99610
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