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Theory of the piezo-Zeeman effect for shallow acceptors in group-IV semiconductors

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Physical Review B 48 (8) 5127 (1993)
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Optical investigations of GaAs/Ga1−x Al x As Quantum wells grown by molecular-beam epitaxy

Y. Chen, R. Cingolani, J. Massies, et al.
Il Nuovo Cimento D 10 (9) 1093 (1988)
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Determination of the spin-exchange interaction constant in wurtzite GaN

M. Julier, J. Campo, B. Gil, J. P. Lascaray and S. Nakamura
Physical Review B 57 (12) R6791 (1998)
DOI: 10.1103/PhysRevB.57.R6791
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The exciton-polariton effect on the photoluminescence of GaN on sapphire

Bernard Gil, Sandra Clur and Olivier Briot
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DOI: 10.1016/S0038-1098(97)00284-6
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Optical response of excitons in a single quantum well: Calculation of normal incidence reflectivity

Y. Chen
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DOI: 10.1007/BF02455353
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Landau Level Spectroscopy

Modern Problems in Condensed Matter Sciences, Landau Level Spectroscopy 27 1305 (1991)
DOI: 10.1016/B978-0-444-88873-0.50017-0
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Exciton reflectivity of GaAs/Ga1−x Al x As multiple quantum wells

Y. Chen, R. Cingolani and J. Massies
Il Nuovo Cimento D 11 (7) 1049 (1989)
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Exchange-induced splitting of exciton energy levels in quantum wires

Y. Chen
Physical Review B 41 (15) 10604 (1990)
DOI: 10.1103/PhysRevB.41.10604
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Interference of the Exciton-Polariton Waves in GaAs Thin Layers

Y Chen, F Bassani, J Massies, C Deparis and G Neu
Europhysics Letters (EPL) 14 (5) 483 (1991)
DOI: 10.1209/0295-5075/14/5/016
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Photoluminescence in quantum well and bulk GaAs: a direct comparative study

Y. Chen, R. Cingolani, L. C. Andreani, F. Bassani and J. Massies
Il Nuovo Cimento D 10 (7) 847 (1988)
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Optical properties of GaN epilayers on sapphire

Magloire Tchounkeu, Olivier Briot, Bernard Gil, Jean Paul Alexis and Roger‐Louis Aulombard
Journal of Applied Physics 80 (9) 5352 (1996)
DOI: 10.1063/1.363475
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Reflectivity of GaAs Thin Films

F. Bassani, Y. Chen, G. Czajkowski and A. Tredicucci
physica status solidi (b) 180 (1) 115 (1993)
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