| Issue |
Ann. Phys. Fr.
Volume 13, Number 3, 1988
|
|
|---|---|---|
| Page(s) | 133 - 151 | |
| DOI | https://doi.org/10.1051/anphys:01988001303013300 | |
| Published online | 01 June 2004 | |
Scanning tunneling microscopy (S.T.M.) of semiconductor surfaces and metal-semiconductor interfaces
Faculté des Sciences de Luminy, U.A. CNRS 783, Département de Physique, Case 901, 13288 Marseille Cedex 9, France
In this review paper, we present the basic features of scanning tunneling microscopy and spectroscopy and describe some illustrative applications on local characterization of clean semiconductor surfaces and metal overlayers on reconstructed silicon surfaces.
Résumé
Dans cet article de revue, nous présentons les principes de base de la microscopie par effet tunnel et décrivons des applications à la caractérisation locale de surfaces de semiconducteurs et de dépôts métalliques sur des surfaces de silicium.
PACS: 6116D – Electron microscopy determinations of structures / 6820 – Solid surface structure / 6848 – Solid solid interfaces / 7340N – Electrical properties of metal nonmetal contacts
Key words: interface structure / scanning tunnelling microscopy / semiconductor metal boundaries / semiconductors / surface structure / reconstructed surfaces / scanning tunneling spectroscopy / semiconductor surfaces / metal semiconductor interfaces / scanning tunneling microscopy / Si / Si
© EDP Sciences, 1988