Excitonic spin relaxation in GaN

C. Brimont; M. Gallart; O. Crégut; B. Hönerlage; P. Gilliot

doi:10.1051/anphys:2008021

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Volume 32 / No 2-3 (2007)

Ann. Phys. Fr., 32 2-3 (2007) 115-117

Abstract

Issue		Ann. Phys. Fr. Volume 32, Number 2-3, 2007 COLOQ'1010th conference on lasers and quantum optics


Page(s)		115 - 117
Section		Short contributions
DOI		https://doi.org/10.1051/anphys:2008021
Published online		23 May 2008

Ann. Phys. Fr., Vol. 32, N°2-3 2007, pp. 115-117

Excitonic spin relaxation in GaN

C. Brimont, M. Gallart, O. Crégut, B. Hönerlage and P. Gilliot

IPCMS – GONLO Unité mixte CNRS – ULP (UMR 7504), 23 rue du Lœss, BP 43, 67034 Strasbourg Cedex 2, France

Corresponding author: christelle.brimont@ipcms.u-strasbg.fr

Abstract

By performing non-degenerate pump-probe experiments, we study the relaxation dynamics of spin-polarized A and B excitons in wurtzite epitaxial GaN. We show that the spin relaxation of the exciton as a whole is negligible with regard to the spin relaxation of the individual carriers. We determined $T_{e} = 15$ ps for the electron in the conduction band, $T_{hh} = 5$ ps, and $T_{lh} = 1.5$ ps for the heavy hole (HH) and for the light hole (LH), respectively. The quite long HH relaxation time can be related to the band structure in which the degeneracy between different spin-valence bands is lifted.